According to information released by the China National Intellectual Property Administration on July 25, 2025, Beijing JA Solar PV Technology Co., Ltd. has filed a patent application titled “A Back-Contact Heterojunction Solar Cell and Its Manufacturing Method” (Publication No. CN120379383A), with an application date of June 2025.
The patent abstract discloses a back-contact heterojunction solar cell and its manufacturing method. The method may include the following steps:
- Providing a silicon substrate, where the first main surface of the substrate has alternately arranged first conductive zones and second conductive zones, as well as an electrical isolation zone located between adjacent first and second conductive zones.
- The first conductive zone and the isolation zone form a carrier collection layer doped with a first doping element.
- Sequentially depositing an intrinsic silicon-containing layer and a doped silicon-containing layer with a second doping element on the outer side of the second conductive zone and the carrier collection layer.
- Using a first laser power to remove the intrinsic silicon-containing layer and the doped silicon-containing layer corresponding to the first conductive zone.
- Using a second laser power (lower than the first) to irradiate the doped silicon-containing layer corresponding to the isolation zone, converting it into a first insulating glass layer.
The back-contact heterojunction solar cell produced by this method exhibits reduced leakage risks in the isolation zone.
